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Separating electrons and donors in BaSnO3 via band engineering

DOI: 10.1021/acs.nanolett.9b03825 DOI Help

Authors: Abhinav Prakash (University of Minnesota) , Nicholas F. Quackenbush (National Institute of Standards and Technology) , Hwanhui Yun (University of Minnesota) , Jacob T. Held (University of Minnesota) , Tianqi Wang (University of Minnesota) , Tristan Truttmann (University of Minnesota) , James M. Ablett (Synchrotron SOLEIL) , Conan Weiland (National Institute of Standards and Technology) , Tien-lin Lee (Diamond Light Source) , Joseph C. Woicik (National Institute of Standards and Technology) , K. Andre Mkhoyan (University of Minnesota) , Bharat Jalan (University of Minnesota)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nano Letters

State: Published (Approved)
Published: November 2019
Diamond Proposal Number(s): 15845

Abstract: Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as high room temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle- resolved hard X-ray photoelectron spectroscopy (HAXPES) as a non-destructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.

Journal Keywords: Modulation doping; charge transfer; band alignment; alkaline-earth stannate; transparent conductor; wide band gap material

Subject Areas: Chemistry, Materials


Instruments: I09-Surface and Interface Structural Analysis