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Controlling energy levels and Fermi level en route to fully tailored energetics in organic semiconductors

DOI: 10.1038/s41467-019-13563-x DOI Help

Authors: Ross Warren (University of Oxford) , Alberto Privitera (University of Oxford) , Pascal Kaienburg (University of Oxford) , Andreas E. Lauritzen (University of Oxford) , Oliver Thimm (IEK5-Photovoltaics, Forschungszentrum Jülich) , Jenny Nelson (Imperial College London) , Moritz K. Riede (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature Communications , VOL 10

State: Published (Approved)
Published: December 2019
Diamond Proposal Number(s): 20426

Open Access Open Access

Abstract: Simultaneous control over both the energy levels and Fermi level, a key breakthrough for inorganic electronics, has yet to be shown for organic semiconductors. Here, energy level tuning and molecular doping are combined to demonstrate controlled shifts in ionisation potential and Fermi level of an organic thin film. This is achieved by p-doping a blend of two host molecules, zinc phthalocyanine and its eight-times fluorinated derivative, with tunable energy levels based on mixing ratio. The doping efficiency is found to depend on host mixing ratio, which is explained using a statistical model that includes both shifts of the host’s ionisation potentials and, importantly, the electron affinity of the dopant. Therefore, the energy level tuning effect has a crucial impact on the molecular doping process. The practice of comparing host and dopant energy levels must consider the long-range electrostatic shifts to consistently explain the doping mechanism in organic semiconductors.

Journal Keywords: Electronic devices; Electronic properties and materials; Molecular electronics; Semiconductors

Subject Areas: Physics, Materials


Instruments: I07-Surface & interface diffraction

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s41467-019-13563-x.pdf

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