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Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source

DOI: 10.1016/j.nima.2019.163381 DOI Help

Authors: M. Mironova (University of Oxford) , K. Metodiev (University of Oxford) , P. Allport (University of Birmingham) , I. Berdalovic (CERN; University of Zagreb) , Daniela Bortoletto (University of Oxford) , C. Buttar (University of Glasgow) , R. Cardella (CERN; University of Oslo) , V. Dao (CERN) , M. Dyndal (CERN) , P. Freeman (University of Birmingham) , L. Flores Sanz De Acedo (CERN; University of Glasgow) , L. Gonella (University of Birmingham) , T. Kugathasan (CERN) , H. Pernegger (CERN) , F. Piro (CERN) , R. Plackett (University of Oxford) , P. Riedler (CERN) , A. Sharma (University of Oxford; CERN) , E. J. Schioppa (University of Oxford) , I. Shipsey (University of Oxford) , C. Solans Sanchez (CERN) , W. Snoeys (CERN) , H. Wennlöf (University of Birmingham) , D. Weatherill (University of Oxford) , D. Wood (University of Oxford) , S. Worm (University of Birmingham)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nuclear Instruments And Methods In Physics Research Section A: Accelerators, Spectrometers, Detectors And Associated Equipment , VOL 956

State: Published (Approved)
Published: March 2020
Diamond Proposal Number(s): 2206

Abstract: This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μm steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n− layer layout and front-end, and extra deep p-well and n− gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq∕cm2 . For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.

Journal Keywords: Monolithic active pixel sensors; CMOS sensors; Radiation-hard detectors; Synchrotron light source; TowerJazz; MALTA

Subject Areas: Technique Development


Instruments: B16-Test Beamline