Article Metrics


Online attention

Native defects and their doping response in the lithium solid electrolyte Li7La3Zr2O12

DOI: 10.1021/acs.chemmater.9b04319 DOI Help

Authors: Alexander G. Squires (University of Bath; The Faraday Institution) , David O. Scanlon (The Faraday Institution; University College London; Diamond Light Source) , Benjamin J. Morgan (University of Bath; The Faraday Institution)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Chemistry Of Materials

State: Published (Approved)
Published: February 2020

Abstract: The Li-stuffed garnets LixM2M3′O12 are promising Li-ion solid electrolytes with potential use in solid-state batteries. One strategy for optimizing ionic conductivities in these materials is to tune lithium stoichiometries through aliovalent doping, which is often assumed to produce proportionate numbers of charge-compensating Li vacancies. The native defect chemistry of the Li-stuffed garnets and their response to doping, however, are not well understood, and it is unknown to what degree a simple vacancy-compensation model is valid. Here, we report hybrid density functional theory calculations of a broad range of native defects in the prototypical Li garnet Li7La3Zr2O12. We calculate equilibrium defect concentrations as a function of synthesis conditions and model the response of these defect populations to extrinsic doping. We predict a rich defect chemistry that includes Li and O vacancies and interstitials, and significant numbers of cation-antisite defects. Under reducing conditions, O vacancies act as color centers by trapping electrons. We find that supervalent (donor) doping does not produce charge compensating Li vacancies under all synthesis conditions; under Li-rich/Zr-poor conditions the dominant compensating defects are LiZr antisites, and Li stoichiometries strongly deviate from those predicted by simple “vacancy compensation” models.

Journal Keywords: Defects in solids; Energy; Defects; Lithium; Doping

Subject Areas: Chemistry, Materials, Energy

Technical Areas: