An investigation of the growth and removal of protective antimony caps for antimonide epilayers

DOI: 10.1016/j.tsf.2006.02.083

Authors: S. G. Alcock (Diamond Light Source) , M. J. Everard (University of Leicester) , C. L. Nicklin (Diamond Light Source) , J. S. G. Taylor (University of Leicester) , C. A. Norris (Diamond Light Source) , S. L. Bennett (CCLRC Daresbury Laboratory)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Thin Solid Films , VOL 514 , PAGES 198-203

State: Published (Approved)
Published: August 2006

Abstract: We present a surface X-ray diffraction and Auger electron spectroscopy investigation of antimony capping layers used to protect indium antimonide and gallium antimonide epilayers. A thermally induced amorphous to polycrystalline structural transition was observed at approximately 190 °C for Sb caps on InSb(0 0 1) and GaSb(0 0 1) substrates. We conclude that 100 nm Sb caps deposited at elevated substrate temperature (150–200 °C) have superior structural order, and are able to protect III-Sb epilayers from atmospheric contamination for periods of at least a year.

Journal Keywords: Protective Antimony Cap; X-Ray Diffraction; Iii–V Semiconductors

Diamond Keywords: Semiconductors

Subject Areas: Materials


Technical Areas:

Added On: 10/11/2010 08:51

Discipline Tags:

Materials Science

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