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Local structure of luminescent InGaN alloys

DOI: 10.1063/1.2346172 DOI Help

Authors: Slava Kachkanov (Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde) , Kevin O'donnell (Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde) , R.w. Martin (Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde) , Fred Mosselmans (Diamond Light Source) , S. Pereira (Center for Research in Ceramics and Composite Materials (CICECO), Universidade de Aveiro)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 89 (10)

State: Published (Approved)
Published: September 2006

Abstract: Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 < x < 0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices. (c) 2006 American Institute of Physics.

Journal Keywords: Indium Compounds; Semiconductor Thin Films; Gallium Compounds; Iii-V Semiconductors; Wide Band Gap Semiconductors; Photoluminescence; Exafs

Subject Areas: Physics


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