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Local structure of luminescent InGaN alloys
Authors:
Slava
Kachkanov
(Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde)
,
Kevin
O'donnell
(Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde)
,
R.w.
Martin
(Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde)
,
Fred
Mosselmans
(Diamond Light Source)
,
S.
Pereira
(Center for Research in Ceramics and Composite Materials (CICECO), Universidade de Aveiro)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Applied Physics Letters
, VOL 89 (10)
State:
Published (Approved)
Published:
September 2006
Abstract: Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 < x < 0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices. (c) 2006 American Institute of Physics.
Journal Keywords: Indium Compounds; Semiconductor Thin Films; Gallium Compounds; Iii-V Semiconductors; Wide Band Gap Semiconductors; Photoluminescence; Exafs
Subject Areas:
Physics
Technical Areas: