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Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface

DOI: 10.1038/s41928-020-00487-4 DOI Help

Authors: Baodan Zhao (University of Cambridge; Zhejiang University) , Yaxiao Lian (Zhejiang University) , Linsong Cui (University of Cambridge) , Giorgio Divitini (University of Cambridge) , Gunnar Kusch (University of Cambridge) , Edoardo Ruggeri (University of Cambridge) , Florian Auras (University of Cambridge) , Weiwei Li (University of Cambridge) , Dexin Yang (Zhejiang University; Hangzhou Dianzi University) , Bonan Zhu (University of Cambridge) , Rachel A. Oliver (University of Cambridge) , Judith L. Macmanus-driscoll (University of Cambridge) , Samuel D. Stranks (University of Cambridge) , Dawei Di (University of Cambridge; Zhejiang University) , Richard H. Friend (University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature Electronics , VOL 26

State: Published (Approved)
Published: October 2020
Diamond Proposal Number(s): 17223

Abstract: Light-emitting diodes based on halide perovskites have recently reached external quantum efficiencies of over 20%. However, the performance of visible perovskite light-emitting diodes has been hindered by non-radiative recombination losses and limited options for charge-transport materials that are compatible with perovskite deposition. Here, we report efficient, green electroluminescence from mixed-dimensional perovskites deposited on a thin (~1 nm) lithium fluoride layer on an organic semiconductor hole-transport layer. The highly polar dielectric interface acts as an effective template for forming high-quality bromide perovskites on otherwise incompatible hydrophobic charge-transport layers. The control of crystallinity and dimensionality of the perovskite layer is achieved by using tetraphenylphosphonium chloride as an additive, leading to external photoluminescence quantum efficiencies of around 65%. With this approach, we obtain light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness (>1,500 cd m−2).

Journal Keywords: Design, synthesis and processing; Electrical and electronic engineering; Electronic devices; Electronics, photonics and device physics; Lasers, LEDs and light sources

Subject Areas: Materials, Physics


Instruments: I07-Surface & interface diffraction

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