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Dry etching characteristics and surface reconstruction of Cl/Si(113)

DOI: 10.1016/j.susc.2004.05.028 DOI Help

Authors: J. I. Flege (Hamburger Synchrotronstrahlungslabor am Deutschen Elektronen-Synchrotron; Universität Bremen) , Th. Schmidt (Universität Bremen) , G. Materlik (Diamond Light Source) , J. Falta (Universität Bremen)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Surface Science , VOL 566-568 , PAGES 94 - 99

State: Published (Approved)
Published: September 2004

Abstract: We present a detailed study of the interaction of chlorine with the Si(I 13) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 degreesC, the most prominent feature is the presence of (2 x n) reconstructions with n = 2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [33 (2) over bar] direction.

Journal Keywords: Scanning tunneling microscopy; Etching; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography; Chlorine; Silicon; High index single crystal surfaces

Subject Areas: Physics

Technical Areas:

Added On: 10/11/2010 08:51

Discipline Tags:

Surfaces Physics

Technical Tags: