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Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator
DOI:
10.1038/s41535-020-00256-8
Authors:
Priscila
Rosa
(Los Alamos National Laboratory)
,
Yuanfeng
Xu
(Max Planck Institute of Microstructure Physics)
,
Marein
Rahn
(Los Alamos National Laboratory)
,
Jean
Souza
(UNICAMP)
,
Satya
Kushwaha
(Los Alamos National Laboratory)
,
Larissa
Veiga
(University College London)
,
Alessandro
Bombardi
(Diamond Light Source)
,
Sean
Thomas
(Los Alamos National Laboratory)
,
Marc
Janoschek
(Paul Scherrer Institut)
,
Eric
Bauer
(Los Alamos National Laboratory)
,
Mun
Chan
(Los Alamos National Laboratory)
,
Zhijun
Wang
(Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences; University of Chinese Academy of Sciences)
,
Joe
Thompson
(Los Alamos National Laboratory)
,
Neil
Harrison
(Los Alamos National Laboratory)
,
Pascoal
Pagliuso
(UNICAMP)
,
Andrei
Bernevig
(Princeton University)
,
Filip
Ronning
(Los Alamos National Laboratory)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Npj Quantum Materials
, VOL 5
State:
Published (Approved)
Published:
July 2020
Diamond Proposal Number(s):
18991

Abstract: Here we investigate antiferromagnetic Eu5In2Sb6, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu5In2Sb6 is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From ab initio calculations, the paramagnetic state of Eu5In2Sb6 is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke−Johnson potential. Notably, GGA + U calculations suggest that the antiferromagnetic phase of Eu5In2Sb6 may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.
Journal Keywords: Electronic properties and materials; Topological insulators
Subject Areas:
Materials,
Physics
Instruments:
I16-Materials and Magnetism
Documents:
s41535-020-00256-8.pdf
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