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Comparative study of MeVC+ and C2+ ion implantation in GaAs(100): Surface roughness and evaluation of lattice strain

DOI: 10.1116/1.1576402 DOI Help

Authors: G. Kuri (Hasylab, Deutsches Elektronen-Synchrotron DESY, Germany) , G. Materlik (Diamond Light Source) , V. Hagen (Hasylab, Deutsches Elektronen-Synchrotron DESY, Germany) , R. Wiesendanger (Hasylab, Deutsches Elektronen-Synchrotron DESY, Germany.)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Vacuum Science & Technology B: Microelectronics And Nanometer Structures , VOL 21 (3) , PAGES 1134-1142

State: Published (Approved)
Published: May 2003

Abstract: GaAs(100) single crystal substrates have been implanted with 1.00 MeV C + and 2.00 MeV C + 2 at various ion doses. The surfacetopography and roughness of the implantedsurfaces are studied by atomic force microscopy and x-ray reflectometry. Above a threshold dose, production of surface defects is observed, which results in an overall increase of the rms roughness parameter. The enhanced rms roughnesses induced by monomer and by dimer ions at a given dose are comparable. The influence of C + and C + 2 irradiations on the change of lattice parameter in GaAs, and the effect of thermal annealing, are examined by high-resolution x-ray diffraction. For the as-implanted specimens, an increase of the lattice constant, caused by the accumulation of implantation-induced point defects, has been observed and quantified. Thermal treatment of the implantation damage stimulates an almost complete recovery of the primary defects, leaving the crystal practically free from any lattice strain. The electrical characteristics of the C + and C + 2 implantations are also briefly presented and discussed

Journal Keywords: Crystal Defects; Ion Implantation; Atomic Force Microscopy

Subject Areas: Physics

Technical Areas: