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Surface photovoltaic effect and electronic structure of β-InSe

DOI: 10.1103/PhysRevMaterials.4.124604 DOI Help

Authors: L. Kang (Tsinghua University) , L. Shen (Tsinghua University) , Y. J. Chen (Tsinghua University) , S. C. Sun (Tsinghua University) , X. Gu (Tsinghua University) , H. J. Zheng (ShanghaiTech University and CAS-Shanghai Science Research Center) , Z. K. Liu (ShanghaiTech University and CAS-Shanghai Science Research Center; ShanghaiTech Laboratory for Topological Physics) , J. X. Wu (Peking University) , H. L. Peng (Peking University) , F. W. Zheng (Institute of Applied Physics and Computational Mathematics, Beijing) , P. Zhang (Institute of Applied Physics and Computational Mathematics, Beijing) , L. X. Yang (Tsinghua University; Frontier Science Center for Quantum Information, Beijing) , Y. L. Chen (Tsinghua University; ShanghaiTech University and CAS-Shanghai Science Research Center; ShanghaiTech Laboratory for Topological Physics; University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Materials , VOL 4

State: Published (Approved)
Published: December 2020
Diamond Proposal Number(s): 23648 , 24827

Abstract: Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of β-InSe, a van der Waals semiconductor with a direct band gap. Our measurements show a good agreement with ab initio calculations, which helps reveal the important impact of spin-orbit coupling on the electronic structure of β-InSe. Using surface potassium doping, we tune the chemical potential of the system and observe the unoccupied conduction band. The direct band gap is determined to be about 1.3 eV. Interestingly, we observe a global band shift when the sample is illuminated by a continuous-wave laser at 632.8 nm, which can be understood by an efficient surface photovoltaic effect. The surface photovoltaic can be tuned by in situ surface potassium doping. Our results not only provide important insights into the semiconducting properties of InSe, but also suggest a feasible method to study and engineer the surface photovoltaic effect in InSe-based devices.

Journal Keywords: Electronic structure; Semiconductors; Angle-resolved photoemission spectroscopy

Diamond Keywords: Photovoltaics; Semiconductors

Subject Areas: Materials, Physics, Energy

Instruments: I05-ARPES

Added On: 04/01/2021 11:26

Discipline Tags:

Materials Science Energy Materials Physics Hard condensed matter - electronic properties Surfaces

Technical Tags:

Spectroscopy Angle Resolved Photoemission Spectroscopy (ARPES)