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Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

DOI: 10.1103/PhysRevApplied.15.034047 DOI Help

Authors: C. Schmitt (Johannes Gutenberg-University Mainz) , L. Baldrati (Johannes Gutenberg-Universitat Mainz) , L. Sanchez-Tejerina (University of Messina) , F. Schreiber (Johannes Gutenberg-Universitat Mainz) , A. Ross (Gutenberg-University Mainz; Graduate School of Excellence Materials Science in Mainz) , M. Filianina (Johannes Gutenberg-University Mainz; Graduate School of Excellence Materials Science in Mainz) , S. Ding (Johannes Gutenberg-University Mainz; Graduate School of Excellence Materials Science in Mainz; Peking University) , F. Fuhrmann (Johannes Gutenberg-University Mainz) , R. Ramos (Tohoku University) , F. Maccherozzi (Diamond Light Source) , D. Backes (Diamond Light Source) , M.-A. Mawass (Helmholtz-Zentrum Berlin für Materialien und Energie) , F. Kronast (Helmholtz-Zentrum Berlin für Materialien und Energie) , S. Valencia (Helmholtz-Zentrum Berlin für Materialien und Energie) , E. Saitoh (Tohoku University; The University of Tokyo) , G. Finocchio (University of Messina) , M. Klaui (Johannes Gutenberg-University Mainz; Graduate School of Excellence Materials Science in Mainz)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Applied , VOL 15

State: Published (Approved)
Published: March 2021
Diamond Proposal Number(s): 22448

Abstract: Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic Ni O / Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the Néel-vector orientation in these domains is along [ ± 5 ± 5 19], different compared to the bulk ⟨ 112 ⟩ directions. The final state of the in-plane component of the Néel vector n IP after switching by current pulses j along the [ 1 ± 1 0 ] directions is n IP ∥ j . By comparing the observed Néel-vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as b 0 + 2 b 1 = 3 × 10 7 J / m 3 . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

Journal Keywords: Magnetic domains; Magnetization switching; Magnetoelastic effect; Spin dynamics; Spintronics; Antiferromagnets; Magnetic insulators; Magnetic multilayers

Diamond Keywords: Spintronics; Antiferromagnetism

Subject Areas: Materials, Physics


Instruments: I06-Nanoscience

Other Facilities: UE-49-PGM-SPEEM at Helmholtz-Zentrum Berlin

Discipline Tags:

Material Sciences Quantum Materials Multiferroics Physics Electronics Magnetism Surfaces interfaces and thin films

Technical Tags:

Microscopy Spectroscopy Electron Microscopy (EM) Linear Dichroism (LD) PhotoEmmission Electron Microscopy (PEEM) X-ray Magnetic Linear Dichroism (XMLD)