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Controlling the electronic interface properties of AlOx / SrTiO3 heterostructures

DOI: 10.1103/PhysRevMaterials.5.065003 DOI Help

Authors: Berengar Leikert (Universität Würzburg) , Judith Gabel (Diamond Light Source) , Matthias Schmitt (Universität Würzburg) , Martin Stuebinger (Universität Würzburg) , Philipp Scheiderer (Universität Würzburg) , Louis Veyrat (Universität Würzburg) , Tien-Lin Lee (Diamond Light Source) , Michael Sing (Universität Würzburg) , Ralph Claessen (Universität Würzburg)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Materials , VOL 5

State: Published (Approved)
Published: June 2021
Diamond Proposal Number(s): 15856

Abstract: Depositing disordered Al on top of Sr Ti O 3 is a cheap and easy way to create a two-dimensional electron system in the Sr Ti O 3 surface layers. To facilitate future device applications, we passivate the heterostructure by a disordered La Al O 3 capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

Journal Keywords: Electrical conductivity; Surface & interfacial phenomena; Transition-metal oxides

Subject Areas: Materials, Physics

Instruments: I09-Surface and Interface Structural Analysis

Added On: 28/06/2021 09:23

Discipline Tags:

Surfaces Quantum Materials Hard condensed matter - electronic properties Physics Materials Science interfaces and thin films

Technical Tags:

Spectroscopy X-ray Photoelectron Spectroscopy (XPS) Hard X-ray Photoelectron Spectroscopy (HAXPES)