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Orbital and spin character of doped carriers in infinite-layer nickelates
DOI:
10.1103/PhysRevB.104.L220505
Authors:
M.
Rossi
(SLAC National Accelerator Laborator)
,
H.
Lu
(SLAC National Accelerator Laborator; Stanford University)
,
A.
Nag
(Diamond Light Source)
,
D.
Li
(SLAC National Accelerator Laboratory; Stanford University)
,
M.
Osada
(SLAC National Accelerator Laboratory; Stanford University)
,
K.
Lee
(SLAC National Accelerator Laborator; Stanford University)
,
B. Y.
Wang
(SLAC National Accelerator Laborator; Stanford University)
,
S.
Agrestini
(Diamond Light Source)
,
Mirian
Garcia-Fernandez
(Diamond Light Source)
,
J. J.
Kas
(University of Washington; SLAC National Accelerator Laboratory)
,
Y.-D.
Chuang
(Advanced Light Source)
,
Z. X.
Shen
(SLAC National Accelerator Laborator; Stanford University)
,
H. Y.
Hwang
(SLAC National Accelerator Laborator; Stanford University)
,
B.
Moritz
(SLAC National Accelerator Laboratory)
,
Ke-Jin
Zhou
(Diamond Light Source)
,
T. P.
Devereaux
(SLAC National Accelerator Laborator; Stanford University)
,
W. S.
Lee
(SLAC National Accelerator Laboratory)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Physical Review B
, VOL 104
State:
Published (Approved)
Published:
December 2021
Diamond Proposal Number(s):
25165
Abstract: The recent discovery of superconductivity in Nd1−xSrxNiO2 has drawn significant attention in the field. A key open question regards the evolution of the electronic structure with respect to hole doping. Here we exploit x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS) to probe the doping-dependent electronic structure of Nd1−xSrxNiO. Upon doping, a high-energy feature in Ni L3-edge XAS develops in addition to the main absorption peak, while XAS at the O K-, Nd M3- and Nd M5-edge exhibits a much weaker response. This implies that doped holes are mainly introduced into Ni 3 d states. By comparing our data to atomic multiplet calculations including D4h crystal field, the doping-induced feature in Ni L3-edge XAS is consistent with a d 8 spin-singlet state in which doped holes reside in the 3dx2−y2 orbitals. This is further supported by the softening of RIXS orbital excitations due to doping, corroborating with the Fermi level shift associated with increasing holes in the Ni 3dx2−y2 orbital.
Journal Keywords: Electronic structure; Impurities in superconductors; Superconducting gap; Superconducting phase transition; Cuprates; Thin films; Methods in superconductivity; Resonant inelastic x-ray scattering; X-ray absorption spectroscopy
Subject Areas:
Materials,
Physics
Instruments:
I21-Resonant Inelastic X-ray Scattering (RIXS)
Other Facilities: Advanced Light Source
Added On:
13/12/2021 11:53
Discipline Tags:
Surfaces
Superconductors
Quantum Materials
Physics
Hard condensed matter - structures
Materials Science
interfaces and thin films
Perovskites
Metallurgy
Technical Tags:
Scattering
Resonant Inelastic X-ray Scattering (RIXS)