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Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

DOI: 10.1088/0022-3727/42/19/195004 DOI Help

Authors: S. Tsunegi (Tohoku University) , Y. Sakuraba (Tohoku University) , M. Oogane (Tohoku University) , R. J. Hicken (University of Exeter) , K. Takanashi (Tohoku University) , Y. Ando (Tohoku University) , E. Arenholz (Advanced Light Source) , L. R. Shelford (University of Exeter) , N. D. Telling (University of Manchester; Magnetic Spectroscopy Group, STFC Daresbury Laboratory) , G. Van Der Laan (University of Exeter; Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Physics D , VOL 42 (19)

State: Published (Approved)
Published: October 2009

Abstract: Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2?K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin?flip tunnelling process.

Subject Areas: Physics


Instruments: NONE-No attached Diamond beamline