Publication

Article Metrics

Citations


Online attention

Boron nitride on SiC(0001)

DOI: 10.1103/PhysRevMaterials.6.064002 DOI Help

Authors: You-Ron Lin (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA) ? Fundamentals of Future Information Technology; RWTH Aachen University) , Markus Franke (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology) , Shayan Parhizkar (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology) , Miriam Raths (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology) , Victor Wen-Zhe Yu (Duke University) , Tien-Lin Lee (Diamond Light Source) , Serguei Soubatch (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology) , Volker Blum (Duke University) , F. Stefan Tautz (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA) ? Fundamentals of Future Information Technology; RWTH Aachen University) , Christian Kumpf (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA) ? Fundamentals of Future Information Technology; RWTH Aachen University) , Francois C. Bocquet (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich; Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Materials , VOL 6

State: Published (Approved)
Published: June 2022
Diamond Proposal Number(s): 17737

Abstract: In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G- R 0 ∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal B x N y layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0 ∘ orientation of the B x N y template layer upon annealing.

Journal Keywords: Boron nitride; Graphene; Angle-resolved photoemission spectroscopy; Density functional calculations; Low-energy electron diffraction; Spot-profile analysis LEED; X-ray photoelectron spectroscopy; X-ray standing waves

Subject Areas: Materials, Physics


Instruments: I09-Surface and Interface Structural Analysis

Added On: 08/06/2022 09:48

Discipline Tags:

Surfaces Quantum Materials Physics Hard condensed matter - structures Electronics Materials Science interfaces and thin films

Technical Tags:

Diffraction Spectroscopy X-ray Standing Wave (XSW) X-ray Photoelectron Spectroscopy (XPS)