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Insights into post-growth doping and proposals for CdTe:In photovoltaic devices

DOI: 10.1088/2515-7655/ac7ad5 DOI Help

Authors: Luke Thomas (University of Liverpool) , Theo D. C. Hobson (University of Liverpool) , Laurie J. Phillips (University of Liverpool) , Kieran J. Cheetham (University of Liverpool) , Neil Tarbuck (University of Liverpool) , Leanne A. H. Jones (University of Liverpool) , Matthew J. Smiles (University of Liverpool) , Chris H. Don (University of Liverpool) , Pardeep K. Thakur (Diamond Light Source) , Mark Isaacs (Harwell XPS) , Huw Shiel (University of Liverpool) , Stephen Campbell (University of Northumbria) , Vincent Barrioz (University of Northumbria) , Vin Dhanak (University of Liverpool) , Tim Veal (University of Liverpool) , Jonathan D. Major (University of Liverpool) , Ken Durose (University of Liverpool)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Physics: Energy

State: Published (Approved)
Published: June 2022
Diamond Proposal Number(s): 28268

Open Access Open Access

Abstract: This paper is motivated by the potential advantages of higher doping and lower contact barriers in CdTe photovoltaic devices that may be realized by using n- type rather than the conventional p-type solar absorber layers. We present post-growth doping trials for indium in thin polycrystalline CdTe films using diffusion of indium metal and with indium chloride. Chemical concentrations of indium up to 1019 cm-3 were achieved and the films were verified as n-type by hard x-ray photoemission. Post growth chlorine treatment (or InCl3) was found to compensate the n-doping. Trial structures comprising CdS/CdTe:In verified that the doped absorber structures performed as expected both before and after chloride treatment, but it is recognized that this is not an optimum combination. Hence in order to identify how the advantages of n-type absorbers might be fully realized in future work, we also report simulations of a range of p-n junction combinations with n-CdTe, a number of which have the potential for high Voc.

Diamond Keywords: Photovoltaics; Semiconductors

Subject Areas: Materials, Energy, Physics


Instruments: I09-Surface and Interface Structural Analysis

Added On: 27/06/2022 09:11

Documents:
Thomas+et+al_2022_J._Phys._Energy_10.1088_2515-7655_ac7ad5.pdf

Discipline Tags:

Earth Sciences & Environment Sustainable Energy Systems Energy Physics Climate Change Physical Chemistry Energy Materials Chemistry Materials Science

Technical Tags:

Spectroscopy X-ray Photoelectron Spectroscopy (XPS) Hard X-ray Photoelectron Spectroscopy (HAXPES)