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A novel NiO-based p-i-n ultraviolet photodiode

DOI: 10.1016/j.jallcom.2022.167806 DOI Help

Authors: Fahrettin Sarcan (Istanbul University) , Ümit Doğan (Istanbul University) , Ahmad Althumali (University of York; Taif University) , Hari B. Vasili (University of York) , Leonardo Lari (University of York) , Adam Kerrigan (University of York) , Furkan Kuruoğlu (Istanbul University) , Vlado K. Lazarov (University of York) , Ayşe Erol (Istanbul University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Alloys And Compounds , VOL 4

State: Published (Approved)
Published: October 2022
Diamond Proposal Number(s): 30474

Abstract: In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7% Nb-doped SrTiO3 (001) substrate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, respectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.

Journal Keywords: NiO; n-type NiO; p-type NiO; ultraviolet photodiode; p-i-n junction; wide bandgap; Franz–Keldysh

Diamond Keywords: Semiconductors

Subject Areas: Materials, Physics

Diamond Offline Facilities: Electron Physical Sciences Imaging Centre (ePSIC)
Instruments: E01-JEM ARM 200CF

Added On: 03/11/2022 10:25

Discipline Tags:

Physics Electronics Materials Science

Technical Tags:

Microscopy Electron Microscopy (EM) Scanning Transmission Electron Microscopy (STEM)