Charge sharing and cross talk effects in high-Z and wide-bandgap compound semiconductor pixel detectors

DOI: 10.1007/978-3-031-20955-0_10

Authors: Leonardo Abbene (University of Palermo) , Antonino Buttacavoli (University of Palermo) , Fabio Principato (University of Palermo) , Gaetano Gerardi (University of Palermo) , Manuele Bettelli (IMEM/CNR Parma) , Matthew C. Veale (Science and Technology Facilities Council)
Co-authored by industrial partner: No

Type: Book Chapter
ISBN: 978-3-031-20955-0

State: Published (Approved)
Published: January 2023

Abstract: Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current state of the art of the discrimination/correction techniques. The results from original energy-recovery procedures of multiple charge sharing events, recently developed by our group, are also shown.

Journal Keywords: X-ray and gamma ray detectors; Spectroscopic X-ray imaging; Compound semiconductor detectors; CdZnTe detectors; CdTe detectors; Charge sharing; Cross talk

Subject Areas: Physics, Engineering


Instruments: B16-Test Beamline

Added On: 05/01/2023 10:29

Discipline Tags:

Detectors Physics Engineering & Technology

Technical Tags:

Diffraction