Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2

DOI: 10.1007/s40843-022-2348-9

Authors: Hongwei Fang (ShanghaiTech University; University of Chinese Academy of Sciences) , Meng Lyu (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences) , Hao Su (ShanghaiTech University; University of Chinese Academy of Sciences) , Jian Yuan (ShanghaiTech University; University of Chinese Academy of Science) , Yiwei Li (ShanghaiTech University) , Lixuan Xu (Tsinghua University) , Shuai Liu (ShanghaiTech University; University of Chinese Academy of Sciences) , Liyang Wei (ShanghaiTech University; University of Chinese Academy of Sciences) , Xinqi Liu (ShanghaiTech University) , Haifeng Yang (ShanghaiTech University) , Qi Yao (ShanghaiTech University) , Meixiao Wang (ShanghaiTech University) , Yanfeng Guo (ShanghaiTech University) , Wujun Shi (ShanghaiTech University) , Yulin Chen (ShanghaiTech University; University of Oxford) , Enke Liu (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences) , Zhongkai Liu (ShanghaiTech University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Science China Materials , VOL 350

State: Published (Approved)
Published: February 2023

Abstract: The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-high carrier mobility (∼8683 and 7356 cm2 V−1 S−1 for holes and electrons) and extreme magnetoresistance (15,518% at 2 K and 13 T) among kagome-lattice materials. These extraordinary properties are well explained by its band structure with indirect gap, small electron/hole pockets and large bandwidth of the 3d electrons of Ni on the kagome lattice. This work demonstrates that the crystal field and doping serve as the key tuning knobs to optimize the transport properties in kagome-lattice crystals. Our work provides material basis and optimization routes for kagome-lattice semimetals towards electronics and spintronics applications.

Journal Keywords: kagome-lattice; high mobility; extreme magnetoreistance; compensated semimetal; electronic band structure

Diamond Keywords: Spintronics

Subject Areas: Materials, Physics


Instruments: I05-ARPES

Other Facilities: BL03U at Shanghai Synchrotron Radiation Facility

Added On: 06/03/2023 11:01

Discipline Tags:

Superconductors Quantum Materials Physics Hard condensed matter - structures Electronics Magnetism Materials Science

Technical Tags:

Spectroscopy Angle Resolved Photoemission Spectroscopy (ARPES)