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Bright and stable perovskite light-emitting diodes in the near-infrared range

DOI: 10.1038/s41586-023-05792-4 DOI Help

Authors: Yuqi Sun (University of Cambridge) , Lishuang Ge (University of Science and Technology of China (USTC)) , Linjie Dai (University of Cambridge) , Changsoon Cho (University of Cambridge) , Jordi Ferrer Orri (University of Cambridge) , Kangyu Ji (University of Cambridge) , Szymon J. Zelewski (University of Cambridge; Wrocław University of Science and Technology) , Yun Liu (University of Cambridge; Agency for Science Technology and Research) , Alessandro J. Mirabelli (University of Cambridge) , Youcheng Zhang (University of Cambridge) , Jun-Yu Huang (University of Cambridge) , Yusong Wang (University of Science and Technology of China) , Ke Gong (University of Science and Technology of China) , May Ching Lai (University of Cambridge) , Lu Zhang (University of Cambridge) , Dan Yang (University of Science and Technology of China (USTC)) , Jiudong Lin (University of Science and Technology of China (USTC)) , Elizabeth M. Tennyson (University of Cambridge) , Caterina Ducati (University of Cambridge) , Samuel D. Stranks (University of Cambridge) , Lin-Song Cui (University of Science and Technology of China (USTC)) , Neil C. Greenham (University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature , VOL 9

State: Published (Approved)
Published: March 2023
Diamond Proposal Number(s): 30575

Abstract: Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1,2,3,4,5,6,7,8,9,10,11,12,13,14,15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm−2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm−2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm−2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm−2, along with a high radiance of more than 3,200 W s−1 m−2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s−1 m−2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

Journal Keywords: Electronic devices; Inorganic LEDs

Diamond Keywords: Light-Emitting Diodes (LEDs)

Subject Areas: Materials, Physics


Instruments: I07-Surface & interface diffraction

Added On: 28/03/2023 15:28

Discipline Tags:

Surfaces Physics Electronics Materials Science interfaces and thin films Perovskites Metallurgy

Technical Tags:

Scattering Wide Angle X-ray Scattering (WAXS) Grazing Incidence Wide Angle Scattering (GIWAXS)