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The electrodeposition of copper onto UHV-prepared GaAs(001) surfaces

DOI: 10.1016/j.susc.2009.07.020 DOI Help

Authors: Y. Grunder (ESRF) , F. Renner (ESRF) , T.-l. Lee (Diamond Light Source) , D. L. Dheeraj (Norwegian University of Science and Technology) , B. O. Fimland (Norwegian University of Science and Technology) , J. Zegenhagen (ESRF)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Surface Science , VOL 603 (17) , PAGES L105-L108

State: Published (Approved)
Published: September 2009

Abstract: Synchrotron surface X-ray diffraction has been used to investigate in situ the morphology and epitaxy of monolayer amounts of copper electrodeposited from aqueous electrolyte onto ultra-high vacuum prepared, smooth, Ga- or As-terminated GaAs(0 0 1) surfaces. The fcc lattice of the epitaxial Cu islands is rotated by ?5° and tilted by about ?9° with respect to the GaAs substrate lattice, leading to eight symmetry equivalent domains of Cu islands terminated by {1 1 1} facets.

Journal Keywords: GaAs; Electrodeposition; X-ray diffraction; Copper

Subject Areas: Materials


Instruments: NONE-No attached Diamond beamline

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