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Magnetic domain engineering in antiferromagnetic Cu Mn As and Mn2Au

DOI: 10.1103/PhysRevApplied.21.064030 DOI Help

Authors: Sonka Reimers (University of Nottingham; Johannes Gutenberg-Universität Mainz; Diamond Light Source) , Olena Gomonay (Johannes Gutenberg-Universität Mainz) , Oliver J. Amin (University of Nottingham) , Filip Krizek (Institute of Physics, Czech Academy of Sciences) , Luke X. Barton (University of Nottingham) , Yaryna Lytvynenko (Johannes Gutenberg-Universität Mainz; Institute of Magnetism of the NAS of Ukraine and MES of Ukraine; Institute of Magnetism of the National Academy of Sciences (NAS) of Ukraine and the Ministry of Education (MES) of Ukraine) , Stuart F. Poole (University of Nottingham) , Vit Novák (Institute of Physics, Czech Academy of Sciences) , Richard P. Campion (University of Nottingham) , Francesco Maccherozzi (Diamond Light Source) , Gerardina Carbone (MAX IV Laboratory) , Alexander Bjorling (MAX IV Laboratory) , Yuran Niu (MAX IV Laboratory) , Evangelos Golias (MAX IV Laboratory) , Dominik Kriegner (Institute of Physics, Czech Academy of Sciences; Technical University Dresden) , Jairo Sinova (Johannes Gutenberg-Universität Mainz) , Mathias Klaui (Johannes Gutenberg Universitat Mainz; Norwegian University of Science and Technology (NTNU)) , Martin Jourdan (Institut für Physik, Johannes Gutenberg-Universität Mainz) , Sarnjeet S. Dhesi (Diamond Light Source) , Kevin W. Edmonds (University of Nottingham) , Peter Wadley (University of Nottingham)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Applied , VOL 21

State: Published (Approved)
Published: June 2024
Diamond Proposal Number(s): 22437 , 27146

Abstract: Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or nonscalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in Cu⁢Mn⁢As and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the nontrivial interaction of magnetostriction, substrate clamping, and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will hopefully pave the way toward realizing truly functional antiferromagnetic devices.

Journal Keywords: Magnetic anisotropy; Magnetic domains; Magnetism; Magnetoelastic effect; Spintronics; Antiferromagnets

Diamond Keywords: Antiferromagnetism; Spintronics; Data Storage

Subject Areas: Materials, Physics, Information and Communication Technology

Instruments: I06-Nanoscience (XPEEM)

Other Facilities: NanoMAX at MAX IV

Added On: 16/06/2024 10:36

Discipline Tags:

Quantum Materials Physics Electronics Components & Micro-systems Information & Communication Technologies Magnetism Materials Science

Technical Tags:

Microscopy Spectroscopy Electron Microscopy (EM) PhotoEmmission Electron Microscopy (PEEM) Linear Dichroism (LD) X-ray Magnetic Linear Dichroism (XMLD)