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InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

DOI: 10.1063/1.3658619 DOI Help

Authors: V. Kachkanov (Diamond Light Source) , I. P. Dolbnya (Diamond Light Source) , K. P. O'donnell (Department of Physics, SUPA, University of Strathclyde) , R. W. Martin (Department of Physics, SUPA, University of Strathclyde) , P. R. Edwards (Department of Physics, SUPA, University of Strathclyde) , S. Pereira (Department of Physics, CICECO, University of Aveiro)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 99 (18)

State: Published (Approved)
Published: November 2011

Abstract: We report the use of microfocused three-dimensional x-rayreciprocal space mapping to study InGaN epilayers with average InN content ∼20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxialgrowth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.

Journal Keywords: III-V semiconductors; Epitaxy; X-ray diffraction; Reciprocal space; Crystalline solids

Subject Areas: Physics


Instruments: B16-Test Beamline

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