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Determination of the Poisson ratio of (001) and (111) oriented thin films of In2O3 by synchrotron-based x-ray diffraction

DOI: 10.1103/PhysRevB.84.233301 DOI Help

Authors: K. H. L. Zhang (University of Oxford) , A. Regoutz (University of Oxford) , R. G. Palgrave (University College London) , D. J. Payne (University of Oxford) , R. G. Egdell (University of Oxford) , A. Walsh (University of Bath) , S. P. Collins (Diamond Light Source) , D. Wermeille (European Synchrotron Radiation Facility) , R. A. Cowley (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 84 (23)

State: Published (Approved)
Published: December 2011

Abstract: The Poisson ratio of In2 O3 has been determined by measurement of the covariation of in-plane and out-of- plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO2 substrates. The experimental results are in good agreement with values for calculated using atomistic simulation procedures.

Subject Areas: Physics, Materials

Instruments: I16-Materials and Magnetism

Other Facilities: XMaS/BM28 at ESRF

Added On: 07/12/2011 09:56

Discipline Tags:

Surfaces Physics Electronics Materials Science interfaces and thin films

Technical Tags: