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Ultrafast electron dynamics in GeSi nanostructures

DOI: 10.1103/PhysRevB.85.035421 DOI Help

Authors: Stuart Cavill (University of York, Diamond Light Source) , Alessandro Potenza (Diamond Light Source) , Sarnjeet Dhesi (Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 85 (3)

State: Published (Approved)
Published: January 2012

Abstract: The relaxation dynamics of photoexcited hot carriers in Ge x Si 1?x islands grown on Si(111)-(7×7 ) have been studied with the spatial and temporal resolution of time-resolved two-photon photoemission electron microscopy. The relaxation dynamics of the excited electronic states within the Ge-rich Ge x Si 1?x dots and the surrounding Si-rich wetting layer are found to vary significantly below the conduction-band minimum. These differences are ascribed to faster hot-carrier-diffusion rates for the islands compared to those for the wetting layer.

Subject Areas: Physics

Instruments: I06-Nanoscience

Added On: 23/01/2012 12:01

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