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Ultrathin Fe3O4 epitaxial films on wide bandgap GaN(0001)

DOI: 10.1103/PhysRevB.81.035419 DOI Help

Authors: P. K. J. Wong (Spintronics and Nanodevice Laboratory, Department of Electronics, University of York) , W. Zhang (Spintronics and Nanodevice Laboratory, Department of Electronics, University of York) , X. G. Cui (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University) , J. Wu (Department of Physics, University of York) , Z. K. Tao (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University) , X. Li (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University) , Z. L. Xie (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University) , R. Zhang (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University) , Gerrit Van Der Laan (Diamond Light Source) , Yongbing Xu (University of York)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 81 (3)

State: Published (Approved)
Published: January 2010

Abstract: Ultrathin films of magnetite (Fe3O4) have been grown epitaxially on wurtzite wide bandgap semiconductor GaN(0001) surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a (111) orientation of the Fe3O4 films and in-plane epitaxial relationship of < 1 (1) over bar0 >(Fe3O4)parallel to < 11 (2) over bar0 >(GaN) and < 11 (2) over bar >(Fe3O4)parallel to < 1 (1) over bar 00 >(GaN) with the GaN(0001). X-ray photoelectron spectroscopy and x-ray magnetic circular dichroism confirm the growth of stoichiometric Fe3O4, instead of gamma-Fe2O3. The magnetic hysteresis loops and saturation magnetization M-s obtained by superconducting quantum interference device at room temperature show fast saturation of the Fe3O4 films with the magnetization close to that of the bulk single-crystal value. In-plane magnetoresistance (MR) measurements reveal negligibly small MR effects, further indicating that the films are free from antiphase boundaries.

Journal Keywords: Xps; Semiconductors; Spintronics; Interface; Magnetite; Diodes; Gan

Subject Areas: Physics


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