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Induced magnetic moment of Eu3+ ions in GaN

DOI: 10.1038/srep00969 DOI Help
PMID: 23236589 PMID Help

Authors: S. Kachkanov (Diamond Light Source) , M. Wallace (Department of Physics, University of Strathclyde) , G. Van Der Laan (Diamond Light Source) , S. Dhesi (Diamond Light Source) , S. Cavill (University of York, Diamond Light Source) , Y. Fujiwara (Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University) , K. O'donnell (Department of Physics, University of Strathclyde)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Scientific Reports , VOL 2 (969)

State: Published (Approved)
Published: December 2012

Open Access Open Access

Abstract: Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu3+ ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu3+ ions in GaN which is associated with the 7F2 final state of 5D0→7F2 optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.

Subject Areas: Physics

Instruments: B18-Core EXAFS , I06-Nanoscience

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