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Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping

DOI: 10.1002/pssc.201200596 DOI Help

Authors: Slava Kachkanov (Diamond Light Source) , Igor Dolbnya (Diamond Light Source) , Kevin O'donnell (Department of Physics, SUPA, University of Strathclyde) , Katharina Lorenz (Instituto Tecnologico e Nuclear, Estrada Nacional) , Sergio Pereira (CICECO, Departamento de Fisica and I3N, Universidade de Aveiro) , Ian Watson (Institute of Photonics, SUPA, University of Strathclyde) , Thomas Sadler (Tyndall National Institute, University College Cork) , Haoning Li (Tyndall National Institute, University College Cork) , Vitaly Zubialevich (Tyndall National Institute, University College Cork) , Peter Parbrook (Tyndall National Institute, University College Cork)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physica Status Solidi (c)

State: Published (Approved)
Published: December 2012

Abstract: X-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction–space while probing III-nitride materials on the microscale. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Journal Keywords: X-Ray Microdiffraction; Reciprocal Space Mapping; Synchrotron Radiation; Nitride Materials; Aluminium Nitrides; Diffuse Scattering; Focusing; Gallium Nitrides; Incidence Angle; Indium Nitrides; Lattice Parameters; Quantum Wells; Screw Dislocations

Subject Areas: Physics


Instruments: B16-Test Beamline