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Robustness of Basal-Plane Antiferromagnetic Order and the J_{eff}=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators

DOI: 10.1103/PhysRevLett.110.117207 DOI Help
PMID: 25166574 PMID Help

Authors: S. Boseggia (Diamond Light Source) , R. Springell (University of Bristol) , H. C Walker (Deutsches Elektronen-Synchrotron DESY) , H. M. Rønnow (École Polytechnique Fédérale de Lausanne (EPFL)) , Ch. Rüegg (Paul Scherrer Institut; University of Geneva) , H. Okabe (National Institute for Materials Science (NIMS)) , M. Isobe (National Institute for Materials Science (NIMS)) , R. S. Perry (University of Edinburgh) , S. P. Collins (Diamond Light Source) , D. F. Mcmorrow (University College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Letters , VOL 110 (11)

State: Published (Approved)
Published: March 2013
Diamond Proposal Number(s): 7798

Abstract: The magnetic structure and electronic ground state of the layered perovskite Ba 2 IrO 4 have been investigated using x-ray resonant magnetic scattering. Our results are compared with those for Sr 2 IrO 4 , for which we provide supplementary data on its magnetic structure. We find that the dominant, long-range antiferromagnetic order is remarkably similar in the two compounds and that the electronic ground state in Ba 2 IrO 4 , deduced from an investigation of the x-ray resonant magnetic scattering L 3 /L 2 intensity ratio, is consistent with a J eff =1/2 description. The robustness of these two key electronic properties to the considerable structural differences between the Ba and Sr analogues is discussed in terms of the enhanced role of the spin-orbit interaction in 5d transition metal oxides.

Subject Areas: Physics


Beamlines: I16-Materials and Magnetism

Other Synchrotrons: Petra III