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Above Room Temperature Ferromagnetism in Si:Mn and TiO<SUB>2&#8722;<I>&#948;</I></SUB>:Co

DOI: 10.1166/jnn.2012.6543 DOI Help
PMID: 23035512 PMID Help

Authors: A. Granovsky , A. Orlov , N. Perov , E. Gan'shina , A. Semisalova , L. Balagurov , I. Kulemanov , A. Sapelkin , A. Rogalev , A. Smekhova
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal of Nanoscience and Nanotechnology , VOL 12 (9) , PAGES 7540 - 7544

State: Published (Approved)
Published: September 2012

Abstract: We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO2?? magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 × 1016 cm?2. The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO2?? :Co thin films were deposited on LaAIO3 (001) substrates by magnetron sputtering in the argon–oxygen atmosphere at oxygen partial pressure of 2·10?6–2·10?4 Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO2?? :Co thin films at low (< 1%) volume fraction of Co.

Subject Areas: Physics, Materials, Technique Development


Instruments: I18-Microfocus Spectroscopy

Other Facilities: ESRF