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OD-XAS and EXAFS: Structure and Luminescence in Ge Quantum Dots

DOI: 10.1088/1742-6596/430/1/012026 DOI Help

Authors: A. Karatutlu (Queen Mary, University of London) , W. R. Little (Queen Mary, University of London) , A. V. Sapelkin (Queen Mary, University of London) , A. Dent (Diamond Light Source Ltd) , F. Mosselmans (Diamond Light Source) , G. Cibin (Diamond Light Source) , R. Taylor (Diamond Light Source)
Co-authored by industrial partner: No

Type: Conference Paper
Conference: 15th International Conference on X-ray Absorption Fine Structure (XAFS15)
Peer Reviewed: No

State: Published (Approved)
Published: April 2013

Abstract: The source of visible luminescence from Ge nanocrystalline materials has been attributed to various phenomena such as the quantum confinement effect, surface contributions, and so on. In order to understand the origin of this light emission we have performed extended x-ray absorption fine structure (EXAFS) and optically-detected x-ray absorption spectroscopy (OD-XAS) using x-ray excited optical luminescence (XEOL) measurements on a range of Ge quantum dots prepared by various routes including stain etching, sol-gel method, and laser ablation. Such XEOL and OD-XAS studies on Ge and Ge-O rich regions allowed us to determine specificlocal sites responsible for PL.

Subject Areas: Physics

Instruments: B18-Core EXAFS