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Surface structure of Bi_{2}Se_{3}(111) determined by low-energy electron diffraction and surface x-ray diffraction

DOI: 10.1103/PhysRevB.88.041404 DOI Help

Authors: Diogo Duarte Dos Reis (Universidade Federal de Minas Gerais) , Lucas Barreto (Aarhus University) , Marco Bianchi (Aarhus University) , Guilherme Almeida Silva Ribeiro (Universidade Federal de Minas Gerais) , Edmar Avellar Soares (Universidade Federal de Minas Gerais) , Wendell Simões E Silva (Universidade Federal de Minas Gerais) , Vagner Eustáquio De Carvalho (Universidade Federal de Minas Gerais) , Jonathan Rawle (Diamond Light Source) , Moritz Hoesch (Diamond Light Source) , Chris Nicklin (Diamond Light Source) , Willians Principe Fernandes (Universidade Federal de São João Del-Rei) , Jianli Mi (Aarhus University) , Bo Brummerstedt Iversen (Aarhus University) , Philip Hofmann (Aarhus University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 88 (4)

State: Published (Approved)
Published: July 2013
Diamond Proposal Number(s): 7522

Abstract: The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface x-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

Subject Areas: Physics, Materials


Instruments: I07-Surface & interface diffraction