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Probing defects in a small pixellated CdTe sensor using an inclined mono energetic X-Ray micro beam

DOI: 10.1109/NSSMIC.2012.6551965 DOI Help

Authors: E. Frojdh (Mid Sweden University) , C. Frojdh (Mid Sweden University) , E. N. Gimenez (Diamond Light Source) , D. Krapohl (Mid Sweden University) , D. Maneuski (Glasgow University) , B. Norlin (Mid Sweden University) , V. O'shea (Glasgow University) , H. Wilhelm (Diamond Light Source) , N. Tartoni (Diamond Light Source) , G. Thungstrom (Mid Sweden University) , R. M. Zain (Glasgow University)
Co-authored by industrial partner: No

Type: Conference Paper
Conference: Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Peer Reviewed: No

State: Published (Approved)
Published: October 2012

Abstract: High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55μm and 110 μm) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-threshold mode. The time-over-threshold mode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects and indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out in the Extreme Conditions Beamline I15 at Diamond Light Source.

Subject Areas: Technique Development

Instruments: I15-Extreme Conditions

Added On: 26/07/2013 14:18

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