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Photoluminescence in amorphous MgSiO3 silicate

DOI: 10.1093/mnras/stt1203 DOI Help

Authors: S. P. Thompson (Diamond Light Source) , J. E. Parker (Diamond Light Source) , S. J. Day (Keele University, Diamond Light Source) , L. D. Connor (Diamond Light Source) , A. Evans (Keele University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Monthly Notices Of The Royal Astronomical Society , VOL 434 (3) , PAGES 2582-2592

State: Published (Approved)
Published: July 2013
Diamond Proposal Number(s): 7124

Abstract: Samples of amorphous MgSiO3 annealed at temperature steps leading up to their crystallization temperature show a rise in photoluminescence activity, peaking at ?450°C. The photoluminescence band has a main peak at 595?nm and a weaker peak at 624?nm. We present laboratory data to show that the maximum in photoluminescence activity is related to substantial structural reordering that occurs within a relatively narrow temperature range. We attribute the origin of the photoluminescence to non-bridging oxygen hole centre defects, which form around ordered nanosized domain structures as a result of the breakup of tetrahedral connectivity in the disordered inter-domain network, aided by the loss of bonded OH. These defects are removed as crystallization progresses, resulting in the decrease and eventual loss of photoluminescence. Thermally processed hydrogenated amorphous silicate grains could therefore represent a potential carrier of extended red emission.

Journal Keywords: Radiation Mechanisms: Non-Thermal – Methods: Laboratory – Circumstellar

Subject Areas: Physics, Materials, Environment


Instruments: I11-High Resolution Powder Diffraction , I12-JEEP: Joint Engineering, Environmental and Processing