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Benzo[b]thiophene-Fused Boron and Silicon Ladder Acenes

DOI: 10.1021/om4004187 DOI Help

Authors: Lauren G. Mercier (University of Calgary) , Warren E. Piers (University of Calgary) , Ross W. Harrington (Newcastle University) , William Clegg (Newcastle University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Organometallics , VOL 32 (22) , PAGES 6820-6826

State: Published (Approved)
Published: July 2013
Diamond Proposal Number(s): 6749

Abstract: Synthetic routes to three new heteroacene compounds in which two benzo[b]thienyl units are bridged by dimethylsilyl and/or mesitylboryl units are described. In the Si/Si and Si/B compounds 1-syn and 3-syn, respectively, the sulfur atoms of the flanking benzo[b]thiophenes are disposed in meta positions on the central six-membered heterocycle, while in the B/B compound 4-anti, they are para to each other; the reasons for this lie in the synthetic method employed to prepare 4-anti. All three compounds were crystallographically characterized and their photophysical properties examined. A comprehensive examination of their photophysical properties shows that they are weakly absorbing and fluorescing materials, with the diborin derivative 4-anti exhibiting the most red-shifted absorption maxima and largest fluorescence quantum yield.

Journal Keywords: Benzo[B]Thiophene-Fused Boron And Silicon Ladder Acenes

Subject Areas: Chemistry, Materials

Instruments: I19-Small Molecule Single Crystal Diffraction

Added On: 15/08/2013 12:41

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