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Antiferromagnetism in UO_{2} thin epitaxial films

DOI: 10.1103/PhysRevB.88.134426 DOI Help

Authors: Z. Bao (Institute for Transuranium Elements) , R. Springell (University of Bristol) , H. C. Walker (ISIS) , H. Leiste (Karlsruhe Institute of Technology KIT) , K. Kuebel (Karlsruhe Institute of Technology KIT) , R. Prang (Karlsruhe Institute of Technology KIT) , G. Nisbet (Diamond Light Source) , S. Langridge (ISIS, STFC Rutherford Appleton Laboratory) , R. C. C. Ward (University of Oxford) , T. Gouder (European Commission, Joint Research Centre, Institute for Transuranium Elements) , R. Caciuffo (European Commission, Joint Research Centre, Institute for Transuranium Elements) , G. H. Lander (European Commission, Joint Research Centre, Institute for Transuranium Elements)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 88 (13) , PAGES 341-350

State: Published (Approved)
Published: October 2013

Abstract: Thin films (250–4500 A° ) of epitaxial UO2 were produced by reactive sputtering on two different substrate materials: LaAlO3 and CaF2. Using the large enhancement present with resonant x-ray scattering using photons at the uraniumM4 absorption edge, antiferromagnetic (AF) order was found in all films.

Subject Areas: Physics


Instruments: I16-Materials and Magnetism

Other Facilities: ID20 beamline25 of the European Synchrotron Radiation Facility

Added On: 09/12/2013 10:23

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