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Band gap engineering of In2O3 by alloying with Tl2O3

DOI: 10.1063/1.4860986 DOI Help

Authors: David O. Scanlon (Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire) , Anna Regoutz (epartment of Chemistry, Inorganic Chemistry Laboratory, University of Oxford) , Russell G. Egdell (epartment of Chemistry, Inorganic Chemistry Laboratory, University of Oxford) , David J. Morgan (Cardiff Catalysis Institute (CCI), School of Chemistry, Cardiff University) , Graeme W. Watson (School of Chemistry and CRANN, Trinity College Dublin)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 103 (26)

State: Published (Approved)
Published: December 2013

Abstract: Efficient modulation of the bandgap of In2O3 will open up a route to improved electronic properties. We demonstrate using ab initio calculations that Tl incorporation into In2O3 reduces the band gap and confirm that narrowing of the gap is observed by X-ray photoemission spectroscopy on ceramic surfaces. Incorporation of Tl does not break the symmetry of the allowed optical transitions, meaning that the doped thin films should retain optical transparency in the visible region, in combination with a lowering of the conduction band effective mass. We propose that Tl-doping may be an efficient way to increase the dopability and carrier mobility of In2O3.

Journal Keywords: Carrier Mobility; Ceramics; Doped Materials; Engineering; Indium Oxides; Modulation; Opacity; Photoemission; Spectroscopy; Surfaces; Thin Films; X Radiation

Subject Areas: Engineering, Physics

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Added On: 15/01/2014 11:45

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