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Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

DOI: 10.1103/PhysRevB.89.035203 DOI Help

Authors: J. J. Mudd (University of Warwick) , T.-l. Lee (Diamond Light Source) , V. Muñoz-sanjosé (Universitat de Valencia) , J. Zúñiga-pérez (Centre de Recherche sur l’H´et´ero-Epitaxie et ses Applications,) , D. Hesp (University of Liverpool) , J. M. Kahk (Imperial College London) , D. J. Payne (Imperial College London) , R. G. Egdell (University of Oxford) , C. F. Mcconville (University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 89 (3) , PAGES 954

State: Published (Approved)
Published: January 2014

Abstract: Hard x-ray photoelectron spectroscopy (HAXPES) is used to investigate the intrinsic electronic properties of single crystal epitaxial CdO(100) thin films grown by metal organic vapor phase epitaxy (MOVPE). The reduced surface sensitivity of the HAXPES technique relaxes stringent surface preparation requirements, thereby allowing the measurement of as-grown samples with intrinsically higher carrier concentration (n = 2.4 × 1020 cm−3). High-resolution HAXPES spectra of the valence band and core levels measured at photon energy of 6054 eV are presented. The effects of conduction band filling and band gap renormalization are discussed to explain the observed binding energy shifts. The measured bandwidth of the partially occupied conduction band feature indicates that a plasmon contribution may be present at higher carrier concentrations. The Cd 3d5/2 andO 1s core-level line shapes are found to exhibit an increased asymmetry with increased carrier concentration, interpreted as evidence for final state screening ef ects from the carriers in the conduction band. Alternatively the core-level line shape is interpreted as arising from strong conduction electron plasmon satellites. The natureof these two competing models to describe core-level line shapes in metallic oxides is explored.

Journal Keywords: Hard X-Ray Photoelectron Spectroscopy Haxpes Cdo Movpe Thin Films

Subject Areas: Materials, Chemistry


Instruments: I09-Surface and Interface Structural Analysis