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Exchange splitting of the three Γ̅ surface states of Ni(111) from three-dimensional spin- and angle-resolved photoemission spectroscopy

DOI: 10.1103/PhysRevB.80.180404 DOI Help

Authors: M. Hoesch (Diamond Light Source) , T. Okuda (Physik Institut Universität Zürich; The University of Tokyo) , J. Lobo-checa (Physik Institut Universität Zürich; Swiss Light Source) , W. Auwarter (Physik Institut Universität Zürich) , M. Morscher (Physik Institut Universität Zürich) , N. Petrov (St. Petersburg Technical University) , M. Hengsberger (Physik Institut Universität Zürich) , A. Tamai (Physik Institut Universität Zürich) , A. Dolocan (Physik Institut Universität Zürich) , C. Cirelli (Physik Institut Universität Zürich) , M. Corso (Physik Institut Universität Zürich) , M. Muntwiler (Physik Institut Universität Zürich) , M. Klockner (Physik Institut Universität Zürich) , M. Roos (University of Applied Sciences Winterthur) , J. Osterwalder (Physik Institut Universität Zürich) , T. Greber (Physik Institut Universität Zürich)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 80 (18) , PAGES 180404(R)

State: Published (Approved)
Published: November 2009

Abstract: The valence-band electronic structure of a clean Ni(111) surface is investigated by spin-resolved photoemission. At room temperature the orientation of the photoelectron spins on the Bloch sphere and the exchange splitting of surface and bulk states along the surface normal (Gamma) are determined. All investigated states are found to have a sizable exchange splitting >50 meV. Since the splitting is smaller than the intrinsic line width in the spin-integrated spectrum this is only seen with a spin-resolved technique. At room-temperature photoemission reaching above the Fermi level directly shows that the Shockley type surface state S(1) has an occupied majority and an unoccupied minority band with a splitting Delta E(ex)=62 +/- 15 meV. The surface states below the Fermi energy show a larger exchange splitting for in-plane hybridization [Delta E(ex)(S(3))=160 meV] than for out-of-plane hybridization [Delta E(ex)(S(2))=55 meV].

Subject Areas: Physics

Facility: SLS