High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

DOI: 10.1063/1.4870807

Authors: V. A. Shah (University of Warwick) , S. D. Rhead (University of Warwick) , J. E. Halpin (University of Warwick) , O. Trushkevych (University of Warwick) , E. Chávez-Ángel (ICN2-Institut Catala de Nanociencia i Nanotecnologia) , A. Shchepetov (VTT Technical Research Centre of Finland) , Slava Kachkanov (Diamond Light Source) , N. R. Wilson (University of Warwick) , M. Myronov (University of Warwick) , J. S. Reparaz (ICN2-Institut Catala de Nanociencia i Nanotecnologia) , R. S. Edwards (University of Warwick) , M. R. Wagner (ICN2-Institut Catala de Nanociencia i Nanotecnologia) , F. Alzina (ICN2-Institut Catala de Nanociencia i Nanotecnologia) , I. P. Dolbnya (Diamond Light Source) , D. H. Patchett (University of Warwick) , P. S. Allred (University of Warwick) , M. J. Prest (University of Warwick) , P. M. Gammon (University of Warwick) , M. Prunnila (VTT Technical Research Centre of Finland) , T. E. Whall (University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Applied Physics , VOL 115 (14) , PAGES 183-192

State: Published (Approved)
Published: April 2014
Diamond Proposal Number(s): 8583

Abstract: A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

Journal Keywords: Crystal Growth; Deposition; Epitaxy; Fabrication; Germanium; Integrated Circuits; Layers; Membranes; Monocrystals; Nanostructures; Optical Properties; Roughness; Sensors; Silicon; Strains; Thickness

Diamond Keywords: Semiconductors

Subject Areas: Materials, Physics, Technique Development


Instruments: B16-Test Beamline

Added On: 22/05/2014 20:09

Discipline Tags:

Technique Development - Materials Science Physics Electronics Materials Science

Technical Tags:

Diffraction microXRD