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Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy

DOI: 10.1063/1.4898816 DOI Help

Authors: S. E. Harrison (Stanford University, USA.) , P. Schönherr (University of Oxford, U.K.) , Y. Huo (Stanford University, USA.) , J. S. Harris (Stanford University, USA.) , Thorsten Hesjedal (University of Oxford, U.K.)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 105 (15)

State: Published (Approved)
Published: October 2014

Abstract: We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180 °C to 260 °C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism.

Subject Areas: Physics, Materials, Engineering


Instruments: NONE-No attached Diamond beamline

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