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Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy
Authors:
S. E.
Harrison
(Stanford University, USA.)
,
P.
Schönherr
(University of Oxford, U.K.)
,
Y.
Huo
(Stanford University, USA.)
,
J. S.
Harris
(Stanford University, USA.)
,
Thorsten
Hesjedal
(University of Oxford, U.K.)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Applied Physics Letters
, VOL 105 (15)
State:
Published (Approved)
Published:
October 2014
Abstract: We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180 °C to 260 °C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism.
Subject Areas:
Physics,
Materials,
Engineering
Instruments:
NONE-No attached Diamond beamline