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Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry
DOI:
10.1103/PhysRevB.81.104402
Authors:
K.
Olejnik
(Hitachi Cambridge Laboratory)
,
P.
Wadley
(School of Physics and Astronomy, University of Nottingham)
,
J.
Haigh
(School of Physics and Astronomy, University of Nottingham)
,
K.
Edmonds
(School of Physics and Astronomy, University of Nottingham)
,
R. P.
Campion
(School of Physics and Astronomy, University of Nottingham)
,
A.
Rushforth
(School of Physics and Astronomy, University of Nottingham)
,
B. L.
Gallagher
(School of Physics and Astronomy, University of Nottingham)
,
C. T.
Foxon
(School of Physics and Astronomy, University of Nottingham)
,
T.
Jungwirth
(Institute of Physics ASCR, Praha, Czech Republic)
,
J.
Wunderlich
(Hitachi Cambridge Laboratory)
,
S.
Dhesi
(Diamond Light Source)
,
S.
Cavill
(University of York, Diamond Light Source)
,
G.
Van Der Laan
(Diamond Light Source)
,
E.
Arenholz
(Lawrence Berkeley National Laboratory)
Co-authored by industrial partner:
Yes
Type:
Journal Paper
Journal:
Physical Review B
, VOL 81 (10)
, PAGES 104402
State:
Published (Approved)
Published:
March 2010
Diamond Proposal Number(s):
1877
Abstract: We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.
Journal Keywords: Exchange Bias; Magnetic Semiconductors; Spintronics
Subject Areas:
Physics
Instruments:
I06-Nanoscience