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Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

DOI: 10.1103/PhysRevB.81.104402 DOI Help

Authors: K. Olejnik (Hitachi Cambridge Laboratory; Institute of Physics, ASCR) , P. Wadley (University of Nottingham) , J. Haigh (University of Nottingham) , K. Edmonds (University of Nottingham) , R. P. Campion (University of Nottingham) , A. Rushforth (University of Nottingham) , B. L. Gallagher (University of Nottingham) , C. T. Foxon (University of Nottingham) , T. Jungwirth (Institute of Physics, ASCR; University of Nottingham) , J. Wunderlich (Hitachi Cambridge Laboratory; Institute of Physics, ASCR) , S. S. Dhesi (Diamond Light Source) , S. A. Cavill (Diamond Light Source) , G. Van Der Laan (Diamond Light Source) , E. Arenholz (Advanced Light Source, Lawrence Berkeley National Laboratory)
Co-authored by industrial partner: Yes

Type: Journal Paper
Journal: Physical Review B , VOL 81 (10) , PAGES 104402

State: Published (Approved)
Published: March 2010
Diamond Proposal Number(s): 1877

Abstract: We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

Journal Keywords: Exchange Bias; Magnetic Semiconductors; Spintronics

Diamond Keywords: Ferromagnetism; Antiferromagnetism; Semiconductors; Spintronics

Subject Areas: Physics, Materials


Instruments: I06-Nanoscience

Other Facilities: 4.0.2 at ALS

Added On: 31/03/2010 10:52

Discipline Tags:

Quantum Materials Physics Electronics Magnetism Materials Science

Technical Tags:

Spectroscopy Circular Dichroism (CD) X-ray Magnetic Circular Dichroism (XMCD)