Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

DOI: 10.1103/PhysRevB.81.104402

Authors: K. Olejnik (Hitachi Cambridge Laboratory) , P. Wadley (School of Physics and Astronomy, University of Nottingham) , J. Haigh (School of Physics and Astronomy, University of Nottingham) , K. Edmonds (School of Physics and Astronomy, University of Nottingham) , R. P. Campion (School of Physics and Astronomy, University of Nottingham) , A. Rushforth (School of Physics and Astronomy, University of Nottingham) , B. L. Gallagher (School of Physics and Astronomy, University of Nottingham) , C. T. Foxon (School of Physics and Astronomy, University of Nottingham) , T. Jungwirth (Institute of Physics ASCR, Praha, Czech Republic) , J. Wunderlich (Hitachi Cambridge Laboratory) , S. Dhesi (Diamond Light Source) , S. Cavill (University of York, Diamond Light Source) , G. Van Der Laan (Diamond Light Source) , E. Arenholz (Lawrence Berkeley National Laboratory)
Co-authored by industrial partner: Yes

Type: Journal Paper
Journal: Physical Review B , VOL 81 (10) , PAGES 104402

State: Published (Approved)
Published: March 2010
Diamond Proposal Number(s): 1877

Abstract: We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

Journal Keywords: Exchange Bias; Magnetic Semiconductors; Spintronics

Subject Areas: Physics


Instruments: I06-Nanoscience