Epitaxial growth of cubic MnSb on GaAsAND InGaAs(111)

DOI: 10.1142/S2010324714400256

Authors: Gavin Bell (University of Warwick) , Christopher W. Burrows (University of Warwick) , Thomas P. A. Hase (University of Warwick) , Mark J. Ashwin (University of Warwick) , Sean R. C. Mcmitchell (University of Warwick) , Ana M. Sanchez (University of Warwick) , James D. Aldous (University College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Spin

State: Published (Approved)
Published: September 2014
Diamond Proposal Number(s): 8877 , 6507

Abstract: The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap 1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In0:5Ga0:5As(111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In0:5Ga0:5As (0.31%) substrates.

Diamond Keywords: Ferromagnetism; Spintronics; Semiconductors

Subject Areas: Materials, Physics, Information and Communication Technology


Instruments: I16-Materials and Magnetism

Other Facilities: XMaS at ESRF; X22C at NSLS

Added On: 29/10/2014 11:53

Documents:
s2010324714400256.pdf

Discipline Tags:

Quantum Materials Physics Electronics Magnetism Materials Science

Technical Tags:

Diffraction