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Stabilization of boron carbide via silicon doping

DOI: 10.1088/0953-8984/27/1/015401 DOI Help

Authors: J E Proctor (University of Hull) , Vineet Bhakhri (Imperial College London) , R Hao (Imperial College London) , Tim Prior (University of Hull) , Thomas Scheler (University of Edinburgh) , Eugene Gregoryanz (School of Physics and Centre for Science at Extreme Conditions, The University of Edinburgh) , M Chhowalla (Rutgers University) , Finn Giuliani (Imperial College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Physics: Condensed Matter , VOL 27 (1) , PAGES 015401

State: Published (Approved)
Published: January 2015
Diamond Proposal Number(s): 6833

Abstract: Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

Subject Areas: Physics, Materials, Chemistry


Instruments: I15-Extreme Conditions

Added On: 01/12/2014 10:56

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