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Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyldithienothiophene units

DOI: 10.1039/C0JM02607G DOI Help

Authors: Gregg J. Mcentee (University of Strathclyde) , Felipe Vilela (University of Strathclyde) , Peter J. Skabara (University of Strathclyde) , Thomas D. Anthopoulos (Imperial College London) , John G. Labram (Imperial College London) , Steve Tierney (Merck Chemicals) , Ross W. Harrington (Newcastle University) , William Clegg (Newcastle University)
Co-authored by industrial partner: Yes

Type: Journal Paper
Journal: Journal Of Materials Chemistry , VOL 21 (7) , PAGES 2091-2097

State: Published (Approved)
Published: November 2010
Diamond Proposal Number(s): 987

Abstract: The synthesis of a new conjugated material is reported; BDHTT-BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (-5.7 eV) and LUMO (-2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT-BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 x 10(-3) cm(2) V(-1) s(-1), with an on/off ratio of 10(4)-10(5) and a threshold voltage of -42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.

Diamond Keywords: Semiconductors

Subject Areas: Chemistry, Materials

Instruments: I19-Small Molecule Single Crystal Diffraction

Added On: 31/03/2010 23:35

Discipline Tags:

Physical Chemistry Chemistry Materials Science

Technical Tags:

Diffraction Single Crystal X-ray Diffraction (SXRD)