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Coherent X-Ray Diffraction Imaging and Characterization of Strain in Silicon-on-Insulator Nanostructures

DOI: 10.1002/adma.201304511 DOI Help

Authors: Gang Xiong (London Centre for Nanotechnology) , Oussama Moutanabbir (Polytechnique de Montreal,) , Manfred Reiche (Max Planck Institute of Microstructure Physics) , Ross Harder (Argonne National Laboratory) , Ian Robinson (London Centre for Nanotechnology, University College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Materials , VOL 26 (46) , PAGES 7747 - 7763

State: Published (Approved)
Published: December 2014

Abstract: Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.

Subject Areas: Materials

Instruments: I13-1-Coherence

Added On: 19/03/2015 14:59

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