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Electrical properties and strain distribution of Ge suspended structures

DOI: 10.1016/j.sse.2014.12.004 DOI Help

Authors: V. A. Shah (University of Warwick) , S. D. Rhead (University of Warwick) , J. Finch (University of Warwick) , M. Myronov (The University of Warwick) , J. S. Reparaz (Catalan Institute of Nanoscience and Nanotechnology) , R. J. Morris (The University of Warwick) , N. R. Wilson (The University of Warwick) , V. Kachkanov (Diamond Light Source) , I. P. Dolbnya (Diamond Light Source) , J. E. Halpin (University of Warwick) , D. Patchett (University of Warwick) , P. Allred (University of Warwick) , G. Colston (University of Warwick) , K. Sawhney (Diamond Light Source) , C. M. Sotomayor Torres (Catalan Institute of Nanoscience and Nanotechnology) , D. R. Leadley (University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Solid-State Electronics , VOL 108 , PAGES 13 - 18

State: Published (Approved)
Published: June 2015
Diamond Proposal Number(s): 8583

Abstract: Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.

Journal Keywords: Germanium; Epitaxy; Micro-Xrd; Dislocations

Subject Areas: Materials, Engineering, Physics

Instruments: B16-Test Beamline

Added On: 16/04/2015 13:42

Discipline Tags:

Physics Electronics Materials Science

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