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Electrical properties and strain distribution of Ge suspended structures
DOI:
10.1016/j.sse.2014.12.004
Authors:
V. A.
Shah
(University of Warwick)
,
S. D.
Rhead
(University of Warwick)
,
J.
Finch
(University of Warwick)
,
M.
Myronov
(The University of Warwick)
,
J. S.
Reparaz
(Catalan Institute of Nanoscience and Nanotechnology)
,
R. J.
Morris
(The University of Warwick)
,
N. R.
Wilson
(The University of Warwick)
,
V.
Kachkanov
(Diamond Light Source)
,
I. P.
Dolbnya
(Diamond Light Source)
,
J. E.
Halpin
(University of Warwick)
,
D.
Patchett
(University of Warwick)
,
P.
Allred
(University of Warwick)
,
G.
Colston
(University of Warwick)
,
K.
Sawhney
(Diamond Light Source)
,
C. M.
Sotomayor Torres
(Catalan Institute of Nanoscience and Nanotechnology)
,
D. R.
Leadley
(University of Warwick)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Solid-State Electronics
, VOL 108
, PAGES 13 - 18
State:
Published (Approved)
Published:
June 2015
Diamond Proposal Number(s):
8583
Abstract: Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
Journal Keywords: Germanium; Epitaxy; Micro-Xrd; Dislocations
Subject Areas:
Materials,
Engineering,
Physics
Instruments:
B16-Test Beamline
Added On:
16/04/2015 13:42
Discipline Tags:
Physics
Electronics
Materials Science
Technical Tags:
Diffraction