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Growth of Bi2Se3 and Bi2Te3 on amorphous fused silica by MBE

DOI: 10.1002/pssb.201552003 DOI Help

Authors: Liam Collins-mcintyre (University of Oxford) , W. Wang (University of Oxford) , B. Zhou (Advanced Light Source) , Susannah Speller (Department of Materials, University of Oxford) , Y. L. Chen (University of Oxford) , Thorsten Hesjedal (University of Oxford, Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physica Status Solidi (b)

State: Published (Approved)
Published: January 2015

Open Access Open Access

Abstract: Topological insulator (TI) thin films of Biinline imageSeinline image and Biinline imageTeinline image have been successfully grown on amorphous fused silica (vitreous SiOinline image) substrates by molecular beam epitaxy. We find that such growth is possible and investigations by X-ray diffraction reveal good crystalline quality with a high degree of order along the c-axis. Atomic force microscopy, electron backscatter diffraction and X-ray reflectivity are used to study the surface morphology and structural film parameters. Angle-resolved photoemission spectroscopy studies confirm the existence of a topological surface state. This work shows that TI films can be grown on amorphous substrates, while maintaining the topological surface state despite the lack of in-plane rotational order of the domains. The growth on fused silica presents a promising route to detailed thermoelectric measurements of TI films, free from unwanted thermal, electrical, and piezoelectric influences from the substrate.

Journal Keywords: Bismuth Selenides; Bismuth Tellurides; Molecular Beam Epitaxy; Thin Films; Topological Insulators

Subject Areas: Physics, Materials

Instruments: NONE-No attached Diamond beamline