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High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

DOI: 10.1002/adma.201501254 DOI Help
PMID: 26178149 PMID Help

Authors: Taishi Chen (Nanjing University) , Wenqing Liu (York-Nanjing Joint Center for Spintronics and Nano Engineering) , Fubao Zheng (Yancheng Institute of Technology) , Ming Gao (Nanjing University) , Xingchen Pan (Nanjing University) , Gerrit Van Der Laan (Diamond Light Source) , Xuefeng Wang (Nanjing University) , Qinfang Zhang (Yancheng Institute of Technology) , Fengqi Song (Nanjing University) , Baigeng Wang (Nanjing University) , Baolin Wang (Yancheng Institute of Technology) , Yongbing Xu (Nanjing University) , Guanghou Wang (Nanjing University) , Rong Zhang (Nanjing University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Materials

State: Published (Approved)
Published: July 2015
Diamond Proposal Number(s): 8757

Abstract: High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm−3 and the mobility can reach about 7200 cm2 V−1 s−1 with pronounced Shubnikov–de Haas oscillations.

Journal Keywords: Topological Insulators; XMCD; Spintronics

Subject Areas: Materials, Physics, Engineering


Instruments: I10-Beamline for Advanced Dichroism